IRF7526D1TRPBF Generic image

IRF7526D1TRPBF

Part No
IRF7526D1TRPBF
Manufacturer
Infineon
Description
-30V FETKY - MOSFET and Schottky Diode in a Micro 8 package
Datasheet
IRF7526D1TRPBF
Test Report
Available
Samples
Available

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    Availability:
    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 2 A
    Drain to Source Breakdown Voltage -30 V
    Drain to Source Resistance 200 mΩ
    Drain to Source Voltage (Vdss) -30 V
    Fall Time 9.3 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 180 pF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 1.25 W
    Min Breakdown Voltage 30 V
    Min Operating Temperature -55 °C
    Number of Channels 1
    Number of Elements 1
    Power Dissipation 1.25 W
    Rds On Max 200 mΩ
    Rise Time 12 ns
    Turn-Off Delay Time 19 ns
    Turn-On Delay Time 9.7 ns
    Case/Package MSOP
    Mount Surface Mount
    Number of Pins 8
    Number of Terminals 8
    Height 1.11 mm
    Length 3.048 mm
    Width 3.048 mm
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