IRF7420TRPBF Generic image

IRF7420TRPBF

Part No
IRF7420TRPBF
Manufacturer
Infineon
Description
Single P-Channel 12 V 14 mOhm 38 nC HEXFET® Power Mosfet - SOIC-8
Datasheet
IRF7420TRPBF
Test Report
Available
Samples
Available

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    Availability:
    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 11.5 A
    Current Rating -11.5 A
    Drain to Source Breakdown Voltage -12 V
    Drain to Source Resistance 14 mΩ
    Drain to Source Voltage (Vdss) -12 V
    Element Configuration Single
    Fall Time 225 ns
    Gate to Source Voltage (Vgs) 8 V
    Input Capacitance 3.529 nF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 2.5 W
    Min Breakdown Voltage 12 V
    Min Operating Temperature -55 °C
    Nominal Vgs -900 mV
    Number of Channels 1
    Number of Elements 1
    On-State Resistance 14 mΩ
    Package Quantity 4000
    Packaging Tape & Reel
    Power Dissipation 2.5 W
    Rds On Max 14 mΩ
    Resistance 14 MΩ
    Rise Time 8.8 ns
    Schedule B 8541290080, 8541290080|8541290080, 8541290080|8541290080|8541290080, 8541290080|8541290080|8541290080|8541290080
    Turn-Off Delay Time 291 ns
    Turn-On Delay Time 8.8 ns
    Voltage Rating (DC) -12 V
    Case/Package SO
    Mount Surface Mount
    Number of Pins 8
    Number of Terminals 8
    Height 1.75 mm
    Length 4.9784 mm
    Width 3.9878 mm
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