IRF6710S2TRPBF Generic image

IRF6710S2TRPBF

Part No
IRF6710S2TRPBF
Manufacturer
Infineon
Description
MOSFET N-CH 25V 12A DIRECTFET
Datasheet
IRF6710S2TRPBF
Test Report
Available
Samples
Available

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    Availability:
    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 12 A
    Drain to Source Breakdown Voltage 25 V
    Drain to Source Resistance 5.9 mΩ
    Drain to Source Voltage (Vdss) 25 V
    Fall Time 6 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 1.19 nF
    Max Junction Temperature (Tj) 175 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 15 W
    Min Breakdown Voltage 25 V
    Min Operating Temperature -55 °C
    Number of Elements 1
    On-State Resistance 5.9 mΩ
    Package Quantity 4800
    Packaging Tape & Reel
    Power Dissipation 15 W
    Rds On Max 5.9 mΩ
    Rise Time 20 ns
    Turn-Off Delay Time 5.2 ns
    Turn-On Delay Time 7.9 ns
    Mount Surface Mount
    Number of Pins 6
    Number of Terminals 2
    Height 558.8 µm
    Length 4.826 mm
    Width 3.95 mm
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