IRF6648TRPBF Generic image

IRF6648TRPBF

Part No
IRF6648TRPBF
Manufacturer
Infineon
Description
Single N-Channel 60 V 7 mOhm 50 nC HEXFET® Power Mosfet - DirectFET®
Datasheet
IRF6648TRPBF
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 86 A
    Current Rating 86 A
    Drain to Source Breakdown Voltage 60 V
    Drain to Source Resistance 7 mΩ
    Drain to Source Voltage (Vdss) 60 V
    Fall Time 13 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 2.12 nF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 2.8 W
    Manufacturer Package Identifier MG-WDSON-5
    Min Breakdown Voltage 60 V
    Min Operating Temperature -40 °C
    Number of Channels 1
    Number of Elements 1
    On-State Resistance 7 mΩ
    Package Quantity 4800
    Packaging Tape & Reel
    Power Dissipation 2.8 W
    Rds On Max 7 mΩ
    Rise Time 29 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|85
    Threshold Voltage 4 V
    Turn-Off Delay Time 28 ns
    Turn-On Delay Time 16 ns
    Voltage Rating (DC) 60 V
    Mount Surface Mount
    Number of Pins 5
    Number of Terminals 3
    Height 700 µm
    Length 5.45 mm
    Width 5.05 mm
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