IRF5850TRPBF Generic image

IRF5850TRPBF

Part No
IRF5850TRPBF
Manufacturer
Infineon
Description
MOSFET 2P-CH 20V 2.2A 6-TSOP
Test Report
Available
Samples
Available

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    Availability:
    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 2.2 A
    Drain to Source Breakdown Voltage -20 V
    Drain to Source Resistance 135 mΩ
    Element Configuration Dual
    Fall Time 28 ns
    Gate to Source Voltage (Vgs) 12 V
    Input Capacitance 320 pF
    Max Operating Temperature 150 °C
    Max Power Dissipation 960 mW
    Min Breakdown Voltage 20 V
    Min Operating Temperature -55 °C
    Number of Elements 2
    Power Dissipation 960 mW
    Rds On Max 135 mΩ
    Rise Time 14 ns
    Turn-Off Delay Time 31 ns
    Turn-On Delay Time 8.3 ns
    Case/Package TSOP
    Mount Surface Mount
    Number of Pins 6
    Number of Terminals 6
    Height 1.143 mm
    Length 2.9972 mm
    Width 1.75 mm
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