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IRF3709LPBF
- Part No
- IRF3709LPBF
- Manufacturer
- Infineon
- Description
- 30V Single N-Channel HEXFET Power MOSFET in a TO-262 package
- Datasheet
- IRF3709LPBF
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 75 A |
| Current Rating | 90 A |
| Drain to Source Breakdown Voltage | 30 V |
| Drain to Source Resistance | 9 mΩ |
| Drain to Source Voltage (Vdss) | 30 V |
| Element Configuration | Single |
| Fall Time | 9.2 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Input Capacitance | 2.672 nF |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 3.1 W |
| Min Breakdown Voltage | 30 V |
| Min Operating Temperature | -55 °C |
| Number of Elements | 1 |
| Packaging | Bulk |
| Power Dissipation | 120 W |
| Rds On Max | 9 mΩ |
| Rise Time | 171 ns |
| Turn-Off Delay Time | 21 ns |
| Voltage Rating (DC) | 30 V |
| Case/Package | TO-262 |
| Mount | Through Hole |
| Number of Pins | 3 |
| Number of Terminals | 3 |
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