IRF1405ZSPBF Generic image

IRF1405ZSPBF

Part No
IRF1405ZSPBF
Manufacturer
Infineon
Description
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Test Report
Available
Samples
Available

Request for Quote

    Availability:
    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 75 A
    Drain to Source Breakdown Voltage 55 V
    Drain to Source Resistance 4.9 mΩ
    Drain to Source Voltage (Vdss) 55 V
    Element Configuration Single
    Fall Time 82 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 4.78 nF
    Max Junction Temperature (Tj) 175 °C
    Max Operating Temperature 175 °C
    Max Power Dissipation 230 W
    Min Breakdown Voltage 55 V
    Min Operating Temperature -55 °C
    Nominal Vgs 4 V
    Number of Channels 1
    Number of Elements 1
    On-State Resistance 4.9 mΩ
    Package Quantity 1000
    Power Dissipation 230 W
    Rds On Max 4.9 mΩ
    Resistance 4.9 MΩ
    Rise Time 110 ns
    Threshold Voltage 4 V
    Turn-Off Delay Time 48 ns
    Turn-On Delay Time 18 ns
    Case/Package D2PAK
    Mount Surface Mount
    Number of Pins 3
    Number of Terminals 2
    Height 5.084 mm
    Length 10.668 mm
    Width 9.65 mm
    added to cart View cart