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IPW65R045C7FKSA1

Part No: IPW65R045C7FKSA1
Manufacturer: Infineon
Description: N-Channel 650 V 45 mOhm CoolMOSTM C7 Power Transistor-PG-TO-247-3
Datasheet: IPW65R045C7FKSA1
Test Report: Available
Samples: Available

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Specification	Value
Continuous Drain Current (ID)	46 A
Drain to Source Breakdown Voltage	650 V
Drain to Source Resistance	45 mΩ
Drain to Source Voltage (Vdss)	650 V
Fall Time	7 ns
Gate to Source Voltage (Vgs)	20 V
Input Capacitance	4.34 nF
Max Dual Supply Voltage	650 V
Max Junction Temperature (Tj)	150 °C
Max Operating Temperature	150 °C
Max Power Dissipation	227 W
Min Breakdown Voltage	650 V
Min Operating Temperature	-55 °C
Number of Channels	1
Number of Elements	1
On-State Resistance	45 mΩ
Package Quantity	240
Power Dissipation	227 W
Rds On Max	45 mΩ
Rise Time	14 ns
Schedule B	8541290080, 8541290080\|8541290080\|8541290080\|8541290080\|8541290080
Turn-Off Delay Time	82 ns
Turn-On Delay Time	20 ns
Case/Package	TO-247
Mount	Through Hole
Number of Pins	3
Number of Terminals	3
Height	25.4 mm