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IPS70R1K4P7SAKMA1
- Part No
- IPS70R1K4P7SAKMA1
- Manufacturer
- Infineon
- Description
- Single N-Channel 700 V 1.4 Ohm 4.7 nC CoolMOS Power Mosfet - TO-251
- Datasheet
- IPS70R1K4P7SAKMA1
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 4 A |
| Drain to Source Breakdown Voltage | 700 V |
| Drain to Source Resistance | 1.4 Ω |
| Drain to Source Voltage (Vdss) | 700 V |
| Gate to Source Voltage (Vgs) | 16 V |
| Max Junction Temperature (Tj) | 150 °C |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 22.7 W |
| Min Breakdown Voltage | 700 V |
| Min Operating Temperature | -40 °C |
| Number of Channels | 1 |
| Number of Elements | 1 |
| On-State Resistance | 1.4 Ω |
| Package Quantity | 1500 |
| Power Dissipation | 22.7 W |
| Turn-Off Delay Time | 63 ns |
| Turn-On Delay Time | 12 ns |
| Number of Terminals | 3 |
| Height | 8.47 mm |
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