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IPP08CNE8NG
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Product Specification
| Specification | Value |
|---|---|
| Category | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs |
| Win Source Part Number | 603611-IPP08CNE8NG |
| Fake Threat In the Open Market | 69pct. |
| ECCN | EAR99 |
| Temperature Range - Operating | -55°C ~ 175°C (TJ) |
| Mfr | Infineon Technologies |
| Series | OptiMOS™ |
| Package | Bulk |
| Product Status | Active |
| Standard Package | 315 pcs |
| MSL Level | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
| HTSUS | 8541.29.0095 |
| Package / Case | TO-220-3 |
| Supplier Device Package | PG-TO220-3 |
| Mounting Type | Through Hole |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 85 V |
| Current - Continuous Drain (Id) @ 25°C | 95A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 6.4mOhm @ 95A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 130µA |
| Gate Charge (Qg) (Max) @ Vgs | 99 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 6690 pF @ 40 V |
| Power Dissipation (Max) | 167W (Tc) |
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