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IPG20N10S4L35AATMA1
- Part No
- IPG20N10S4L35AATMA1
- Manufacturer
- Infineon
- Description
- 100V, Dual N-Ch, 35 mΩ max, Automotive MOSFET, dual SS08 (5x6), OptiMOS™-T2, PG-TDSON-8, RoHS
- Datasheet
- IPG20N10S4L35AATMA1
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 20 A |
| Drain to Source Breakdown Voltage | 100 V |
| Drain to Source Resistance | 35 mΩ |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate to Source Voltage (Vgs) | 16 V |
| Input Capacitance | 1.105 nF |
| Max Dual Supply Voltage | 100 V |
| Max Junction Temperature (Tj) | 175 °C |
| Max Operating Temperature | 175 °C |
| Max Power Dissipation | 43 W |
| Min Breakdown Voltage | 100 V |
| Min Operating Temperature | -55 °C |
| Number of Channels | 2 |
| Number of Elements | 2 |
| On-State Resistance | 45 mΩ |
| Package Quantity | 5000 |
| Packaging | Tape & Reel |
| Power Dissipation | 43 W |
| Rds On Max | 35 mΩ |
| Turn-Off Delay Time | 18 ns |
| Turn-On Delay Time | 3 ns |
| Mount | Surface Mount |
| Number of Pins | 8 |
| Number of Terminals | 8 |
| Height | 1.1 mm |
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