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IPD65R600E6
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Product Specification
| Specification | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Win Source Part Number | 040636-IPD65R600E6 |
| Popularity | High |
| Fake Threat In the Open Market | 42 pct. |
| Supply and Demand Status | Balance |
| Categories | Discrete Semiconductor Products |
| Packaging | Reel - TR |
| Status | Not For New Designs |
| Temperature Range - Operating | -55°C to 150°C (TJ) |
| ECCN | EAR99 |
| Mounting | SMD (SMT) |
| Case / Package | PG-TO252-3 |
| Family Name | IPD65R600E6 |
| Introduction Date | July 15, 2010 |
| Country of Origin | China, Malaysia |
| Halogen Free | Compliant |
| Estimated EOL Date | 2022 |
| Technology | MOSFET |
| Polarity | N-Channel |
| Drain-Source Breakdown Voltage | 650V |
| Continuous Drain Current at 25°C | 7.3A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Gate-Source Threshold Voltage | 3.5V @ 210μA |
| Max Gate Charge | 23nC @ 10V |
| Max Input Capacitance | 440pF @ 100V |
| Maximum Gate-Source Voltage | ±20V |
| Power Dissipation (Max) | 63W (Tc) |
| Maximum Rds On at Id,Vgs | 600 mOhm @ 2.1A, 10V |
| Dimension | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Is this a common-used part? | Yes |
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