Generic image
IPD65R420CFDBTMA1
- Part No
- IPD65R420CFDBTMA1
- Manufacturer
- Infineon
- Description
- Trans MOSFET N-CH 650V 8.7A 3-Pin(2+Tab) TO-252
- Datasheet
- IPD65R420CFDBTMA1
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 8.7 A |
| Drain to Source Resistance | 420 mΩ |
| Drain to Source Voltage (Vdss) | 650 V |
| Fall Time | 8 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Input Capacitance | 870 pF |
| Max Dual Supply Voltage | 650 V |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 83.3 W |
| Min Breakdown Voltage | 650 V |
| Min Operating Temperature | -55 °C |
| Number of Elements | 1 |
| On-State Resistance | 420 mΩ |
| Package Quantity | 2500 |
| Packaging | Tape & Reel |
| Power Dissipation | 83.3 W |
| Rds On Max | 420 mΩ |
| Rise Time | 7 ns |
| Turn-Off Delay Time | 38 ns |
| Turn-On Delay Time | 10 ns |
| Case/Package | TO-252-3 |
| Mount | Surface Mount |
| Number of Terminals | 2 |
added to cart
View cart
Related Products
