Generic image
IPD30N03S4L14ATMA1
- Part No
- IPD30N03S4L14ATMA1
- Manufacturer
- Infineon
- Description
- 30V, N-Ch, 13.6 mΩ max, Automotive MOSFET, DPAK, OptiMOS™-T2, PG-TO252-3, RoHS
- Datasheet
- IPD30N03S4L14ATMA1
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 30 A |
| Drain to Source Breakdown Voltage | 30 V |
| Drain to Source Resistance | 13.6 mΩ |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate to Source Voltage (Vgs) | 16 V |
| Input Capacitance | 980 pF |
| Max Dual Supply Voltage | 30 V |
| Max Junction Temperature (Tj) | 175 °C |
| Max Operating Temperature | 175 °C |
| Max Power Dissipation | 31 W |
| Min Breakdown Voltage | 30 V |
| Min Operating Temperature | -55 °C |
| Number of Channels | 1 |
| Number of Elements | 1 |
| On-State Resistance | 13.6 mΩ |
| Package Quantity | 2500 |
| Packaging | Tape & Reel |
| Power Dissipation | 31 W |
| Rds On Max | 13.6 mΩ |
| Rise Time | 2 ns |
| Schedule B | 8541290080 |
| Turn-Off Delay Time | 12 ns |
| Turn-On Delay Time | 3 ns |
| Case/Package | DPAK |
| Mount | Surface Mount |
| Number of Pins | 3 |
| Number of Terminals | 2 |
| Height | 2.5 mm |
added to cart
View cart
Related Products