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IPB180N04S4H0ATMA1
- Part No
- IPB180N04S4H0ATMA1
- Manufacturer
- Infineon
- Description
- Power MOSFET, N Channel, 40 V, 180 A, 1.1 mOhm, TO-263 (D2PAK), 7 Pins, Surface Mount
- Datasheet
- IPB180N04S4H0ATMA1
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 180 A |
| Drain to Source Resistance | 1.1 mΩ |
| Drain to Source Voltage (Vdss) | 40 V |
| Fall Time | 49 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Input Capacitance | 17.94 nF |
| Max Dual Supply Voltage | 40 V |
| Max Operating Temperature | 175 °C |
| Max Power Dissipation | 250 W |
| Min Breakdown Voltage | 40 V |
| Min Operating Temperature | -55 °C |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Tape & Reel |
| Power Dissipation | 250 W |
| Rds On Max | 1.1 mΩ |
| Rise Time | 24 ns |
| Schedule B | 8541290080 |
| Turn-Off Delay Time | 50 ns |
| Turn-On Delay Time | 44 ns |
| Case/Package | TO-263-7 |
| Mount | Surface Mount |
| Number of Pins | 7 |
| Number of Terminals | 6 |
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