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IPB110N20N3LFATMA1
- Part No
- IPB110N20N3LFATMA1
- Manufacturer
- Infineon
- Description
- Trans MOSFET N-CH 200V 88A 3-Pin(2+Tab) D2PAK T/R
- Datasheet
- IPB110N20N3LFATMA1
- Test Report
- Available
- Samples
- Available
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- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 11 A |
| Drain to Source Breakdown Voltage | 200 V |
| Drain to Source Resistance | 11 mΩ |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate to Source Voltage (Vgs) | 20 V |
| Max Junction Temperature (Tj) | 150 °C |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 250 W |
| Min Breakdown Voltage | 200 V |
| Min Operating Temperature | -55 °C |
| Number of Channels | 1 |
| Number of Elements | 1 |
| On-State Resistance | 11 mΩ |
| Package Quantity | 1000 |
| Packaging | Tape & Reel |
| Power Dissipation | 250 W |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|85 |
| Turn-Off Delay Time | 79 ns |
| Turn-On Delay Time | 6 ns |
| Case/Package | D2PAK |
| Number of Terminals | 2 |
| Height | 4.7 mm |
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