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IMBF170R450M1XTMA1

Part No: IMBF170R450M1XTMA1
Manufacturer: Infineon
Description: Transistor Silicon Carbide MOSFET N-CH 1700V 9.8A 7-Pin TO-263 T/R
Datasheet: IMBF170R450M1XTMA1
Test Report: Available
Samples: Available

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Specification	Value
Continuous Drain Current (ID)	9.8 A
Drain to Source Breakdown Voltage	1.7 kV
Drain to Source Resistance	450 mΩ
Drain to Source Voltage (Vdss)	1.7 kV
Gate to Source Voltage (Vgs)	20 V
Max Junction Temperature (Tj)	175 °C
Max Operating Temperature	175 °C
Min Operating Temperature	-55 °C
Number of Channels	1
Power Dissipation	107 W
Schedule B	8541290080\|8541290080\|8541290080\|8541290080\|8541290080\|8541290080\|8541290080\|8541290080\|8541290080\|8541290080\|8541290080\|8541290080\|8541290080\|8541290080\|8541290080\|8541290080\|8541290080\|8541290080\|8541290080\|8541290080\|8541290080\|8541290080\|8541290080\|85
Turn-Off Delay Time	32 ns
Turn-On Delay Time	27 ns
Height	4.5 mm