IAUC100N08S5N043ATMA1 Generic image

IAUC100N08S5N043ATMA1

Part No
IAUC100N08S5N043ATMA1
Manufacturer
Infineon
Description
Mosfet, Aec-Q101, N-Ch, 100A, Pg-Tdson-8 Rohs Compliant: Yes |Infineon IAUC100N08S5N043ATMA1
Datasheet
IAUC100N08S5N043ATMA1
Test Report
Available
Samples
Available

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    Availability:
    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 100 A
    Drain to Source Breakdown Voltage 80 V
    Drain to Source Resistance 4.3 mΩ
    Drain to Source Voltage (Vdss) 80 V
    Gate to Source Voltage (Vgs) 20 V
    Max Junction Temperature (Tj) 175 °C
    Max Operating Temperature 175 °C
    Max Power Dissipation 125 W
    Min Breakdown Voltage 80 V
    Min Operating Temperature -55 °C
    Number of Channels 1
    Number of Elements 1
    Package Quantity 5000
    Packaging Tape & Reel
    Power Dissipation 125 W
    Turn-Off Delay Time 13 ns
    Turn-On Delay Time 8 ns
    Number of Terminals 8
    Height 1.1 mm
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