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HUF75639G3
- Part No
- HUF75639G3
- Manufacturer
- onsemi
- Description
- N-Channel UltraFET Power MOSFET 100 V, 56 A, 25 mΩ
- Datasheet
- HUF75639G3
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 56 A |
| Current Rating | 56 A |
| Drain to Source Breakdown Voltage | 100 V |
| Drain to Source Resistance | 25 mΩ |
| Drain to Source Voltage (Vdss) | 100 V |
| Element Configuration | Single |
| Fall Time | 25 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Input Capacitance | 2 nF |
| Max Junction Temperature (Tj) | 175 °C |
| Max Operating Temperature | 175 °C |
| Max Power Dissipation | 200 W |
| Min Breakdown Voltage | 100 V |
| Min Operating Temperature | -55 °C |
| Nominal Vgs | 4 V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Packaging | Tape & Reel (TR) |
| Power Dissipation | 200 W |
| Rds On Max | 25 mΩ |
| Rise Time | 60 ns |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Threshold Voltage | 4 V |
| Turn-Off Delay Time | 20 ns |
| Turn-On Delay Time | 15 ns |
| Voltage Rating (DC) | 100 V |
| Case/Package | TO-247-3 |
| Contact Plating | Tin |
| Mount | Through Hole |
| Number of Pins | 3 |
| Number of Terminals | 3 |
| Weight | 6.39 g |
| Height | 24.75 mm |
| Length | 15.87 mm |
| Width | 4.82 mm |
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