HUF75329D3ST Generic image

HUF75329D3ST

Part No
HUF75329D3ST
Manufacturer
onsemi
Description
N-Channel UltraFET Power MOSFET 55V, 20A, 26mΩ
Datasheet
HUF75329D3ST
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 20 A
    Current Rating 20 A
    Drain to Source Breakdown Voltage 55 V
    Drain to Source Resistance 26 mΩ
    Drain to Source Voltage (Vdss) 55 V
    Element Configuration Single
    Fall Time 33 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 1.06 nF
    Max Junction Temperature (Tj) 175 °C
    Max Operating Temperature 175 °C
    Max Power Dissipation 128 W
    Min Breakdown Voltage 55 V
    Min Operating Temperature -55 °C
    Nominal Vgs 4 V
    Number of Channels 1
    Number of Elements 1
    Packaging Tape & Reel (TR)
    Power Dissipation 128 W
    Rds On Max 26 mΩ
    Resistance 26 MΩ
    Rise Time 30 ns
    Turn-Off Delay Time 10 ns
    Turn-On Delay Time 7 ns
    Voltage Rating (DC) 55 V
    Case/Package TO-252-3
    Mount Surface Mount
    Number of Pins 3
    Number of Terminals 2
    Weight 260.37 mg
    Height 2.517 mm
    Length 6.73 mm
    Width 2.39 mm
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