Generic image
HUF75329D3ST
- Part No
- HUF75329D3ST
- Manufacturer
- onsemi
- Description
- N-Channel UltraFET Power MOSFET 55V, 20A, 26mΩ
- Datasheet
- HUF75329D3ST
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 20 A |
| Current Rating | 20 A |
| Drain to Source Breakdown Voltage | 55 V |
| Drain to Source Resistance | 26 mΩ |
| Drain to Source Voltage (Vdss) | 55 V |
| Element Configuration | Single |
| Fall Time | 33 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Input Capacitance | 1.06 nF |
| Max Junction Temperature (Tj) | 175 °C |
| Max Operating Temperature | 175 °C |
| Max Power Dissipation | 128 W |
| Min Breakdown Voltage | 55 V |
| Min Operating Temperature | -55 °C |
| Nominal Vgs | 4 V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Packaging | Tape & Reel (TR) |
| Power Dissipation | 128 W |
| Rds On Max | 26 mΩ |
| Resistance | 26 MΩ |
| Rise Time | 30 ns |
| Turn-Off Delay Time | 10 ns |
| Turn-On Delay Time | 7 ns |
| Voltage Rating (DC) | 55 V |
| Case/Package | TO-252-3 |
| Mount | Surface Mount |
| Number of Pins | 3 |
| Number of Terminals | 2 |
| Weight | 260.37 mg |
| Height | 2.517 mm |
| Length | 6.73 mm |
| Width | 2.39 mm |
added to cart
View cart