H7N0307AB Generic image

H7N0307AB

Part No
H7N0307AB
Manufacturer
Renesas
Description
Power Field-Effect Transistor, 60A I(D), 30V, 0.0115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor...
Datasheet
H7N0307AB
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 60 A
    Drain to Source Resistance 11.5 mΩ
    Max Operating Temperature 150 °C
    Max Power Dissipation 90 W
    Min Breakdown Voltage 30 V
    Number of Elements 1
    Number of Terminals 3
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