FQPF6N80 Generic image

FQPF6N80

Part No
FQPF6N80
Manufacturer
onsemi
Description
800V N-Channel MOSFET | MOSFET N-CH 800V 3.3A TO-220F
Datasheet
FQPF6N80
Test Report
Available
Samples
Available

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    Availability:
    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 3.3 A
    Current Rating 3.3 A
    Drain to Source Breakdown Voltage 800 V
    Drain to Source Resistance 1.95 Ω
    Drain to Source Voltage (Vdss) 800 V
    Element Configuration Single
    Fall Time 45 ns
    Gate to Source Voltage (Vgs) 30 V
    Input Capacitance 1.5 nF
    Max Operating Temperature 150 °C
    Max Power Dissipation 51 W
    Min Breakdown Voltage 800 V
    Min Operating Temperature -55 °C
    Number of Elements 1
    Power Dissipation 51 W
    Rds On Max 1.95 Ω
    Rise Time 70 ns
    Turn-Off Delay Time 65 ns
    Voltage Rating (DC) 800 V
    Case/Package TO-220-3
    Mount Through Hole
    Number of Pins 3
    Number of Terminals 3
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