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FQPF18N20V2YDTU
- Part No
- FQPF18N20V2YDTU
- Manufacturer
- onsemi
- Description
- Power Field-Effect Transistor, 18A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
- Datasheet
- FQPF18N20V2YDTU
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 18 A |
| Drain to Source Breakdown Voltage | 200 V |
| Drain to Source Resistance | 140 mΩ |
| Drain to Source Voltage (Vdss) | 200 V |
| Element Configuration | Single |
| Fall Time | 62 ns |
| Gate to Source Voltage (Vgs) | 30 V |
| Input Capacitance | 1.08 nF |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 40 W |
| Min Operating Temperature | -55 °C |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 40 W |
| Rds On Max | 140 mΩ |
| Rise Time | 133 ns |
| Turn-Off Delay Time | 38 ns |
| Case/Package | TO-220-3 |
| Mount | Through Hole |
| Number of Pins | 3 |
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