FQP9N50C Generic image

FQP9N50C

Part No
FQP9N50C
Manufacturer
onsemi
Description
Power MOSFET, N-Channel, QFET®, 500 V, 9 A, 800 mΩ, TO-220
Datasheet
FQP9N50C
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 9 A
    Current Rating 9 A
    Drain to Source Breakdown Voltage 500 V
    Drain to Source Resistance 800 mΩ
    Drain to Source Voltage (Vdss) 500 V
    Dual Supply Voltage 500 V
    Element Configuration Single
    Fall Time 64 ns
    Gate to Source Voltage (Vgs) 30 V
    Input Capacitance 1.03 nF
    Max Operating Temperature 150 °C
    Max Power Dissipation 135 W
    Min Breakdown Voltage 500 V
    Min Operating Temperature -55 °C
    Nominal Vgs 4 V
    Number of Elements 1
    Power Dissipation 135 W
    Rds On Max 800 mΩ
    Rise Time 65 ns
    Termination Through Hole
    Turn-Off Delay Time 93 ns
    Voltage Rating (DC) 500 V
    Case/Package TO-220AB
    Mount Through Hole
    Number of Pins 3
    Number of Terminals 3
    Weight 1.8 g
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