FQP8N90C Generic image

FQP8N90C

Part No
FQP8N90C
Manufacturer
onsemi
Description
Transistor,mosfet,n-Channel,900V V(Br)Dss,6.3A I(D),to-220 Rohs Compliant: Yes |Onsemi FQP8N90C
Datasheet
FQP8N90C
Test Report
Available
Samples
Available

Request for Quote

    Availability:
    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 6.3 A
    Current Rating 6.3 A
    Drain to Source Breakdown Voltage 900 V
    Drain to Source Resistance 1.9 Ω
    Drain to Source Voltage (Vdss) 900 V
    Element Configuration Single
    Fall Time 70 ns
    Gate to Source Voltage (Vgs) 30 V
    Input Capacitance 2.08 nF
    Max Operating Temperature 150 °C
    Max Power Dissipation 171 W
    Min Breakdown Voltage 900 V
    Min Operating Temperature -55 °C
    Number of Elements 1
    Rds On Max 1.9 Ω
    Rise Time 110 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Turn-Off Delay Time 70 ns
    Turn-On Delay Time 40 ns
    Voltage Rating (DC) 900 V
    Case/Package TO-220AB
    Mount Through Hole
    Number of Pins 3
    Number of Terminals 3
    Weight 1.8 g
    added to cart View cart