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FQI5N60CTU
- Part No
- FQI5N60CTU
- Manufacturer
- onsemi
- Description
- N-Channel Power MOSFET, QFET®, 600 V, 4.5 A, 2.5 Ω, I2PAK
- Datasheet
- FQI5N60CTU
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 4.5 A |
| Current Rating | 5 A |
| Drain to Source Breakdown Voltage | 600 V |
| Drain to Source Resistance | 2.5 Ω |
| Drain to Source Voltage (Vdss) | 600 V |
| Element Configuration | Single |
| Fall Time | 46 ns |
| Gate to Source Voltage (Vgs) | 30 V |
| Input Capacitance | 670 pF |
| Max Junction Temperature (Tj) | 150 °C |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 100 W |
| Min Breakdown Voltage | 600 V |
| Min Operating Temperature | -55 °C |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Power Dissipation | 100 W |
| Rds On Max | 2.5 Ω |
| Rise Time | 42 ns |
| Turn-Off Delay Time | 38 ns |
| Turn-On Delay Time | 10 ns |
| Voltage Rating (DC) | 600 V |
| Case/Package | TO-262-3 |
| Mount | Through Hole |
| Number of Terminals | 3 |
| Weight | 2.084 g |
| Height | 15.01 mm |
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