FQB630TM Generic image

FQB630TM

Part No
FQB630TM
Manufacturer
onsemi
Description
Mosfet N-ch 200V 9A D2PAK
Datasheet
FQB630TM
Test Report
Available
Samples
Available

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    Availability:
    Upon a request

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 9 A
    Current Rating 9 A
    Drain to Source Breakdown Voltage 200 V
    Drain to Source Resistance 400 mΩ
    Drain to Source Voltage (Vdss) 200 V
    Element Configuration Single
    Fall Time 64 ns
    Gate to Source Voltage (Vgs) 25 V
    Input Capacitance 550 pF
    Max Operating Temperature 150 °C
    Max Power Dissipation 78 W
    Min Breakdown Voltage 200 V
    Min Operating Temperature -55 °C
    Number of Elements 1
    Power Dissipation 3.13 W
    Rds On Max 400 mΩ
    Rise Time 75 ns
    Turn-Off Delay Time 47 ns
    Voltage Rating (DC) 200 V
    Case/Package TO-263-3
    Mount Surface Mount
    Number of Terminals 2
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