Generic image
FPF1C2P5BF07A
- Part No
- FPF1C2P5BF07A
- Manufacturer
- onsemi
- Description
- Power Integrated Module (PIM), F1, IGBT + MOSFET, 650 V, 90 mΩ
- Datasheet
- FPF1C2P5BF07A
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 36 A |
| Drain to Source Resistance | 90 mΩ |
| Drain to Source Voltage (Vdss) | 650 V |
| Isolation Voltage | 2.5 kV |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 250 W |
| Min Breakdown Voltage | 650 V |
| Min Operating Temperature | -40 °C |
| Number of Elements | 5 |
| Rds On Max | 90 mΩ |
| Reverse Recovery Time | 109 ns |
| Case/Package | F |
| Mount | Through Hole |
| Number of Terminals | 24 |
| Weight | 23 g |
added to cart
View cart
Related Products