FODM124 Generic image

FODM124

Part No
FODM124
Manufacturer
onsemi
Description
The FODM121 series, FODM124, and FODM2701 consists of a gallium arsenide infrared emitting diode driving a phototransistor in a compact 4-pin mini
Datasheet
FODM124
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Collector Emitter Breakdown Voltage 80 V
    Collector Emitter Saturation Voltage 400 mV
    Collector Emitter Voltage (VCEO) 80 V
    Current Transfer Ratio 100 %
    Dark Current 100 nA
    Fall Time 3 µs
    Forward Current 50 mA
    Forward Voltage 1.3 V
    Input Current 50 mA
    Isolation Voltage 3.75 kV
    Max Collector Current 80 mA
    Max Input Current 50 mA
    Max Junction Temperature (Tj) 125 °C
    Max Operating Temperature 100 °C
    Max Output Voltage 80 V
    Max Power Dissipation 150 mW
    Min Operating Temperature -40 °C
    Number of Channels 1
    Number of Elements 1
    Output Current per Channel 80 mA
    Output Voltage 80 V
    Packaging Bulk
    Power Dissipation 150 mW
    Reverse Breakdown Voltage 6 V
    Reverse Voltage 6 V
    Rise Time 3 µs
    Schedule B 8541408000
    Case/Package SMD/SMT
    Mount Surface Mount
    Number of Pins 4
    Weight 155 mg
    Height 2.4 mm
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