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FOD817B
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Product Specification
| Specification | Value |
|---|---|
| Collector Emitter Breakdown Voltage | 70 V |
| Collector Emitter Saturation Voltage | 200 mV |
| Collector Emitter Voltage (VCEO) | 70 V |
| Current Transfer Ratio | 130 % |
| Dark Current | 100 nA |
| Fall Time | 18 µs |
| Forward Current | 50 mA |
| Forward Voltage | 1.4 V |
| Input Current | 20 mA |
| Isolation Voltage | 5 kV |
| Max Collector Current | 50 mA |
| Max Input Current | 50 mA |
| Max Junction Temperature (Tj) | 125 °C |
| Max Operating Temperature | 110 °C |
| Max Output Voltage | 70 V |
| Max Power Dissipation | 150 mW |
| Min Operating Temperature | -55 °C |
| Number of Channels | 1 |
| Number of Circuits | 1 |
| Number of Elements | 1 |
| Output Current per Channel | 50 mA |
| Output Voltage | 6 V |
| Power Dissipation | 200 mW |
| Reverse Breakdown Voltage | 6 V |
| Reverse Voltage | 6 V |
| Rise Time | 18 µs |
| Schedule B | 8541408000, 8541408000|8541408000|8541408000|8541408000|8541408000 |
| Case/Package | DIP |
| Contact Plating | Tin |
| Mount | Through Hole |
| Number of Pins | 4 |
| Weight | 408 mg |
| Height | 4.4 mm |
| Length | 6.35 mm |
| Width | 6.35 mm |
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