FOD817A Generic image

FOD817A

Part No
FOD817A
Manufacturer
onsemi
Description
Emitter Voltage V(Br)Ceo:70V; Product Range:-; Input Current:50Ma Rohs Compliant: Yes |Onsemi FOD817A.
Datasheet
FOD817A
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Collector Emitter Breakdown Voltage 70 V
    Collector Emitter Saturation Voltage 200 mV
    Collector Emitter Voltage (VCEO) 70 V
    Current Transfer Ratio 80 %
    Dark Current 100 nA
    Fall Time 18 µs
    Forward Current 50 mA
    Forward Voltage 1.4 V
    Input Current 50 mA
    Isolation Voltage 5 kV
    Max Collector Current 50 mA
    Max Input Current 50 mA
    Max Junction Temperature (Tj) 125 °C
    Max Operating Temperature 110 °C
    Max Output Voltage 70 V
    Max Power Dissipation 150 mW
    Min Operating Temperature -55 °C
    Number of Channels 1
    Number of Circuits 1
    Number of Elements 1
    Output Current per Channel 50 mA
    Output Voltage 70 V
    Packaging Box
    Power Dissipation 70 mW
    Reverse Breakdown Voltage 6 V
    Reverse Voltage 6 V
    Rise Time 18 µs
    Schedule B 8541408000, 8541408000|8541408000|8541408000|8541408000|8541408000
    Case/Package DIP
    Contact Plating Tin
    Mount Through Hole
    Number of Pins 4
    Weight 408 mg
    Height 4.6 mm
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