FMB200 Generic image

FMB200

Part No
FMB200
Manufacturer
onsemi
Description
Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 2-Element, PNP, Silicon
Datasheet
FMB200
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Collector Base Voltage (VCBO) -60 V
    Collector Emitter Breakdown Voltage -45 V
    Collector Emitter Saturation Voltage -200 mV
    Collector Emitter Voltage (VCEO) 45 V
    Current Rating -500 mA
    Element Configuration Dual
    Emitter Base Voltage (VEBO) -6 V
    Frequency 300 MHz
    Gain Bandwidth Product 300 MHz
    hFE Min 100
    Max Breakdown Voltage 45 V
    Max Collector Current 500 mA
    Max Frequency 300 MHz
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 700 mW
    Min Operating Temperature -55 °C
    Number of Elements 2
    Polarity PNP
    Power Dissipation 700 mW
    Transition Frequency 300 MHz
    Voltage Rating (DC) -45 V
    Case/Package SOT-23-6
    Mount Surface Mount
    Number of Pins 6
    Number of Terminals 6
    Weight 36 mg
    Height 900 µm
    Length 3 mm
    Width 1.7 mm
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