FJV3104RMTF Generic image

FJV3104RMTF

Part No
FJV3104RMTF
Manufacturer
onsemi
Description
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Collector Base Voltage (VCBO) 50 V
    Collector Emitter Breakdown Voltage 50 V
    Collector Emitter Saturation Voltage 300 mV
    Collector Emitter Voltage (VCEO) 50 V
    Continuous Collector Current 100 mA
    Current Rating 100 mA
    Element Configuration Single
    Emitter Base Voltage (VEBO) 10 V
    hFE Min 68
    Max Breakdown Voltage 50 V
    Max Collector Current 100 mA
    Max Operating Temperature 150 °C
    Max Power Dissipation 200 mW
    Min Operating Temperature -55 °C
    Number of Elements 1
    Polarity NPN
    Power Dissipation 200 mW
    Transition Frequency 250 MHz
    Voltage Rating (DC) 50 V
    Case/Package SOT-23-3
    Mount Surface Mount
    Number of Pins 3
    Number of Terminals 3
    Weight 30 mg
    Height 930 µm
    Length 2.92 mm
    Width 1.3 mm
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