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FJN4309RTA
- Part No
- FJN4309RTA
- Manufacturer
- onsemi
- Description
- Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
- Datasheet
- FJN4309RTA
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Collector Base Voltage (VCBO) | -40 V |
| Collector Emitter Breakdown Voltage | -40 V |
| Collector Emitter Saturation Voltage | -300 mV |
| Collector Emitter Voltage (VCEO) | 40 V |
| Continuous Collector Current | -100 mA |
| Current Rating | -100 mA |
| Element Configuration | Single |
| Emitter Base Voltage (VEBO) | -5 V |
| Gain Bandwidth Product | 200 MHz |
| hFE Min | 100 |
| Max Breakdown Voltage | 40 V |
| Max Collector Current | 100 mA |
| Max Junction Temperature (Tj) | 150 °C |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 300 mW |
| Min Operating Temperature | -55 °C |
| Number of Elements | 1 |
| Polarity | PNP |
| Power Dissipation | 300 mW |
| Transition Frequency | 200 MHz |
| Voltage Rating (DC) | -40 V |
| Case/Package | TO-92-3 |
| Mount | Through Hole |
| Number of Pins | 3 |
| Number of Terminals | 3 |
| Weight | 240 mg |
| Height | 5.33 mm |
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