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FJD5304DTF
- Part No
- FJD5304DTF
- Manufacturer
- onsemi
- Description
- Power Bipolar Transistor, 4A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin
- Datasheet
- FJD5304DTF
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Collector Base Voltage (VCBO) | 700 V |
| Collector Emitter Breakdown Voltage | 400 V |
| Collector Emitter Saturation Voltage | 1.5 V |
| Collector Emitter Voltage (VCEO) | 400 V |
| Current Rating | 4 A |
| Element Configuration | Single |
| Emitter Base Voltage (VEBO) | 12 V |
| hFE Min | 8 |
| Max Breakdown Voltage | 400 V |
| Max Collector Current | 4 A |
| Max Junction Temperature (Tj) | 150 °C |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 30 W |
| Min Operating Temperature | -55 °C |
| Number of Elements | 1 |
| Polarity | NPN |
| Power Dissipation | 1.25 W |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Voltage Rating (DC) | 400 V |
| Case/Package | DPAK |
| Mount | Surface Mount |
| Number of Pins | 3 |
| Number of Terminals | 2 |
| Weight | 260.37 mg |
| Height | 2.517 mm |
| Length | 6.73 mm |
| Width | 6.22 mm |
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