FGH40T100SMD-F155 Generic image

FGH40T100SMD-F155

Part No
FGH40T100SMD-F155
Manufacturer
onsemi
Description
Trans IGBT Chip N-CH 1000V 80A 333000mW 3-Pin(3+Tab) TO-247 Tube
Datasheet
FGH40T100SMD-F155
Test Report
Available
Samples
Available

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    Availability:
    Available

    Product Specification

    Specification Value
    Collector Emitter Breakdown Voltage 1 kV
    Collector Emitter Saturation Voltage 2.3 V
    Collector Emitter Voltage (VCEO) 1 kV
    Continuous Collector Current 80 A
    Element Configuration Single
    Fall Time 30 ns
    Max Collector Current 80 A
    Max Junction Temperature (Tj) 175 °C
    Max Operating Temperature 175 °C
    Max Power Dissipation 333 W
    Min Operating Temperature -55 °C
    Number of Elements 1
    Power Dissipation 333 W
    Reverse Recovery Time 78 ns
    Rise Time 64 ns
    Turn-Off Delay Time 285 ns
    Turn-On Delay Time 29 ns
    Case/Package TO-247-3
    Mount Through Hole
    Number of Pins 3
    Number of Terminals 3
    Height 24.75 mm
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