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FGA15N120ANTDTU_F109
- Part No
- FGA15N120ANTDTU_F109
- Manufacturer
- onsemi
- Description
- IGBT Single Transistor, 30 A, 2.3 V, 186 W, 1.2 kV, TO-3P, 3
- Datasheet
- FGA15N120ANTDTU_F109
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Collector Emitter Breakdown Voltage | 1.2 kV |
| Collector Emitter Saturation Voltage | 2.3 V |
| Collector Emitter Voltage (VCEO) | 1.2 kV |
| Element Configuration | Single |
| Max Collector Current | 24 A |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 186 W |
| Min Operating Temperature | -55 °C |
| Reverse Recovery Time | 330 ns |
| Mount | Through Hole |
| Number of Pins | 3 |
| Weight | 6.401 g |
| Height | 18.9 mm |
| Length | 15.8 mm |
| Width | 5 mm |
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