Generic image
FFSH2065BDN-F085
- Part No
- FFSH2065BDN-F085
- Manufacturer
- onsemi
- Description
- Silicon Carbide (SiC) Schottky Diode - EliteSiC, 20A, 650V, D2, TO-247-3L Auto SiC 650V
- Datasheet
- FFSH2065BDN-F085
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Forward Voltage | 1.7 V |
| Max Forward Surge Current (Ifsm) | 42 A |
| Max Operating Temperature | 175 °C |
| Max Output Current | 10 A |
| Max Power Dissipation | 65 W |
| Min Operating Temperature | -55 °C |
| Number of Elements | 2 |
| Peak Reverse Current | 40 µA |
| Reverse Standoff Voltage | 650 V |
| Schedule B | 8541100080, 8541100080|8541100080|8541100080|8541100080|8541100080 |
| Number of Terminals | 3 |
added to cart
View cart
Related Products