FDMS86252L Generic image

FDMS86252L

Part No
FDMS86252L
Manufacturer
onsemi
Description
MOSFET N-CH 150V 4.4A 8PQFN
Datasheet
FDMS86252L
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 4.4 A
    Drain to Source Breakdown Voltage 150 V
    Drain to Source Resistance 56 mΩ
    Drain to Source Voltage (Vdss) 150 V
    Element Configuration Single
    Fall Time 2.9 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 1.335 nF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 50 W
    Min Breakdown Voltage 150 V
    Min Operating Temperature -55 °C
    Number of Channels 1
    Number of Elements 1
    Power Dissipation 2.5 W
    Rds On Max 56 mΩ
    Rise Time 1.4 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Turn-Off Delay Time 19 ns
    Turn-On Delay Time 6.8 ns
    Mount Surface Mount
    Number of Pins 8
    Number of Terminals 5
    Weight 74 mg
    Height 1.1 mm
    Length 5 mm
    Width 5.85 mm
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