FDMS8460 Generic image

FDMS8460

Part No
FDMS8460
Manufacturer
onsemi
Description
N-Channel Power Trench® MOSFET 40V, 49A, 2.2mΩ
Datasheet
FDMS8460
Test Report
Available
Samples
Available

Request for Quote

    Availability:
    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 25 A
    Drain to Source Breakdown Voltage 40 V
    Drain to Source Resistance 2.2 mΩ
    Drain to Source Voltage (Vdss) 40 V
    Element Configuration Single
    Fall Time 7 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 7.205 nF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 104 W
    Min Breakdown Voltage 40 V
    Min Operating Temperature -55 °C
    Number of Channels 1
    Number of Elements 1
    Power Dissipation 2.5 W
    Rds On Max 2.2 mΩ
    Resistance 2.2 MΩ
    Rise Time 9 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Threshold Voltage 1.9 V
    Turn-Off Delay Time 48 ns
    Turn-On Delay Time 19 ns
    Voltage 40 V
    Contact Plating Tin
    Mount Surface Mount
    Number of Pins 8
    Number of Terminals 5
    Height 1.1 mm
    Length 5 mm
    Width 6 mm
    added to cart View cart