FDMS7678 Generic image

FDMS7678

Part No
FDMS7678
Manufacturer
onsemi
Description
MOSFET, N-CH, 30V, 8PQFN; Transistor Polarity: N Channel; Continuous Drain Curren
Datasheet
FDMS7678
Test Report
Available
Samples
Available

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    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 17.5 A
    Drain to Source Breakdown Voltage 30 V
    Drain to Source Resistance 5.5 mΩ
    Drain to Source Voltage (Vdss) 30 V
    Element Configuration Single
    Fall Time 3 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 2.41 nF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 41 W
    Min Breakdown Voltage 30 V
    Min Operating Temperature -55 °C
    Nominal Vgs 1.5 V
    Number of Channels 1
    Number of Elements 1
    Power Dissipation 2.3 W
    Rds On Max 5.5 mΩ
    Rise Time 4 ns
    Threshold Voltage 1.5 V
    Turn-Off Delay Time 26 ns
    Turn-On Delay Time 10 ns
    Mount Surface Mount
    Number of Pins 8
    Number of Terminals 5
    Weight 74 mg
    Height 1.1 mm
    Length 5.1 mm
    Width 6.25 mm
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