FDMC86160ET100 Generic image

FDMC86160ET100

Part No
FDMC86160ET100
Manufacturer
onsemi
Description
PT5 100/20V Nch Power Trench MOSFET - 8LD, PQFN, POWERCLIP SINGLE, JEDEC, MO-240, 3.3X3.3 MM
Datasheet
FDMC86160ET100
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 9 A
    Drain to Source Breakdown Voltage 100 V
    Drain to Source Resistance 14 mΩ
    Drain to Source Voltage (Vdss) 100 V
    Element Configuration Single
    Fall Time 3.4 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 1.29 nF
    Max Junction Temperature (Tj) 175 °C
    Max Operating Temperature 175 °C
    Max Power Dissipation 2.8 W
    Min Breakdown Voltage 100 V
    Min Operating Temperature -55 °C
    Number of Channels 1
    Number of Elements 1
    Packaging Tape & Reel (TR)
    Power Dissipation 2.8 W
    Rds On Max 14 mΩ
    Rise Time 3.6 ns
    Turn-Off Delay Time 16 ns
    Turn-On Delay Time 9.7 ns
    Mount Surface Mount
    Number of Pins 8
    Number of Terminals 5
    Weight 152.7 mg
    Height 800 µm
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