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FDMC4435BZ
- Part No
- FDMC4435BZ
- Manufacturer
- onsemi
- Description
- Pqfn 3X3, -30V, -20A, 20.0M Ohm, Pch Power Trench Mosfet
- Datasheet
- FDMC4435BZ
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 8.5 A |
| Drain to Source Breakdown Voltage | -30 V |
| Drain to Source Resistance | 20 mΩ |
| Drain to Source Voltage (Vdss) | -30 V |
| Element Configuration | Single |
| Fall Time | 20 ns |
| Gate to Source Voltage (Vgs) | 25 V |
| Input Capacitance | 2.045 nF |
| Max Junction Temperature (Tj) | 150 °C |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 31 W |
| Min Breakdown Voltage | 30 V |
| Min Operating Temperature | -55 °C |
| Nominal Vgs | -1.9 V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Packaging | Cut Tape |
| Power Dissipation | 2.3 W |
| Rds On Max | 20 mΩ |
| Resistance | 20 MΩ |
| Rise Time | 6 ns |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Threshold Voltage | -1.9 V |
| Turn-Off Delay Time | 35 ns |
| Turn-On Delay Time | 10 ns |
| Contact Plating | Gold |
| Mount | Surface Mount |
| Number of Pins | 8 |
| Number of Terminals | 5 |
| Weight | 200 mg |
| Height | 800 µm |
| Length | 3.3 mm |
| Width | 3.3 mm |
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