FDMC4435BZ Generic image

FDMC4435BZ

Part No
FDMC4435BZ
Manufacturer
onsemi
Description
Pqfn 3X3, -30V, -20A, 20.0M Ohm, Pch Power Trench Mosfet
Datasheet
FDMC4435BZ
Test Report
Available
Samples
Available

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    Availability:
    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 8.5 A
    Drain to Source Breakdown Voltage -30 V
    Drain to Source Resistance 20 mΩ
    Drain to Source Voltage (Vdss) -30 V
    Element Configuration Single
    Fall Time 20 ns
    Gate to Source Voltage (Vgs) 25 V
    Input Capacitance 2.045 nF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 31 W
    Min Breakdown Voltage 30 V
    Min Operating Temperature -55 °C
    Nominal Vgs -1.9 V
    Number of Channels 1
    Number of Elements 1
    Packaging Cut Tape
    Power Dissipation 2.3 W
    Rds On Max 20 mΩ
    Resistance 20 MΩ
    Rise Time 6 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Threshold Voltage -1.9 V
    Turn-Off Delay Time 35 ns
    Turn-On Delay Time 10 ns
    Contact Plating Gold
    Mount Surface Mount
    Number of Pins 8
    Number of Terminals 5
    Weight 200 mg
    Height 800 µm
    Length 3.3 mm
    Width 3.3 mm
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