FDMC2610 Generic image

FDMC2610

Part No
FDMC2610
Manufacturer
onsemi
Description
N-Channel Trench® MOSFET, UltraFET, 200V, 9.5A, 200mΩ
Datasheet
FDMC2610
Test Report
Available
Samples
Available

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    Availability:
    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 2.2 A
    Current Rating 9.5 A
    Drain to Source Breakdown Voltage 200 V
    Drain to Source Resistance 397 mΩ
    Drain to Source Voltage (Vdss) 200 V
    Element Configuration Single
    Fall Time 16 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 960 pF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 42 W
    Min Breakdown Voltage 200 V
    Min Operating Temperature -55 °C
    Number of Channels 1
    Number of Elements 1
    Power Dissipation 42 W
    Rds On Max 200 mΩ
    Resistance 200 MΩ
    Rise Time 13 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Turn-Off Delay Time 29 ns
    Turn-On Delay Time 17 ns
    Voltage Rating (DC) 220 V
    Contact Plating Tin
    Mount Surface Mount
    Number of Pins 8
    Number of Terminals 8
    Weight 165.33333 mg
    Height 800 µm
    Length 3 mm
    Width 3 mm
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