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FDL100N50F
- Part No
- FDL100N50F
- Manufacturer
- onsemi
- Description
- N-Channel Power MOSFET, UniFETTM, FRFET®, 500 V, 100 A, 55 mΩ, TO-264
- Datasheet
- FDL100N50F
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 100 A |
| Drain to Source Breakdown Voltage | 500 V |
| Drain to Source Resistance | 55 mΩ |
| Drain to Source Voltage (Vdss) | 500 V |
| Element Configuration | Single |
| Fall Time | 105 ns |
| Gate to Source Voltage (Vgs) | 30 V |
| Input Capacitance | 12 nF |
| Max Junction Temperature (Tj) | 150 °C |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 2.5 kW |
| Min Breakdown Voltage | 500 V |
| Min Operating Temperature | -55 °C |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Power Dissipation | 2.5 kW |
| Rds On Max | 55 mΩ |
| Rise Time | 186 ns |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Threshold Voltage | 3 V |
| Turn-Off Delay Time | 202 ns |
| Turn-On Delay Time | 63 ns |
| Case/Package | TO-264 |
| Mount | Through Hole |
| Number of Pins | 3 |
| Number of Terminals | 3 |
| Weight | 6.756 g |
| Height | 29 mm |
| Length | 20 mm |
| Width | 5 mm |
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