FDC6301N Generic image

FDC6301N

Part No
FDC6301N
Manufacturer
onsemi
Description
ON SEMICONDUCTOR - FDC6301N - Dual MOSFET, Dual N Channel, 220 mA, 25 V, 4 ohm, 4.5 V, 850 mV
Datasheet
FDC6301N
Test Report
Available
Samples
Available

Request for Quote

    Availability:
    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 220 mA
    Current Rating 220 mA
    Drain to Source Breakdown Voltage 25 V
    Drain to Source Resistance 4 Ω
    Drain to Source Voltage (Vdss) 25 V
    Dual Supply Voltage 25 V
    Element Configuration Dual
    Fall Time 4.5 ns
    Gate to Source Voltage (Vgs) 8 V
    Input Capacitance 9.5 pF
    Max Operating Temperature 150 °C
    Max Power Dissipation 900 mW
    Min Breakdown Voltage 25 V
    Min Operating Temperature -55 °C
    Nominal Vgs 850 mV
    Number of Elements 2
    Packaging Cut Tape
    Power Dissipation 900 mW
    Rds On Max 4 Ω
    Resistance 4 Ω
    Rise Time 4.5 ns
    Schedule B 8541210080, 8541210080|8541210080|8541210080|8541210080|8541210080
    Termination SMD/SMT
    Threshold Voltage 850 mV
    Turn-Off Delay Time 4 ns
    Turn-On Delay Time 5 ns
    Voltage Rating (DC) 25 V
    Case/Package SOT-23-6
    Contact Plating Tin
    Mount Surface Mount
    Number of Pins 6
    Number of Terminals 6
    Weight 36 mg
    Height 1 mm
    Length 3 mm
    Width 1.7 mm
    added to cart View cart