FDB14N30TM Generic image

FDB14N30TM

Part No
FDB14N30TM
Manufacturer
onsemi
Description
N-Channel Power MOSFET, UniFETTM, 300 V, 14 A, 290 mΩ, D2PAK
Datasheet
FDB14N30TM
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 14 A
    Drain to Source Breakdown Voltage 300 V
    Drain to Source Resistance 290 mΩ
    Drain to Source Voltage (Vdss) 300 V
    Dual Supply Voltage 300 V
    Element Configuration Single
    Fall Time 75 ns
    Gate to Source Voltage (Vgs) 30 V
    Input Capacitance 1.06 nF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 140 W
    Min Breakdown Voltage 300 V
    Min Operating Temperature -55 °C
    Nominal Vgs 5 V
    Number of Channels 1
    Number of Elements 1
    Power Dissipation 140 W
    Rds On Max 290 mΩ
    Resistance 290 MΩ
    Rise Time 105 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Termination SMD/SMT
    Threshold Voltage 5 V
    Turn-Off Delay Time 30 ns
    Turn-On Delay Time 20 ns
    Case/Package D2PAK
    Contact Plating Tin
    Mount Surface Mount
    Number of Pins 2
    Number of Terminals 2
    Weight 1.31247 g
    Height 5.08 mm
    Length 10.67 mm
    Width 11.33 mm
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