FCPF11N65 Generic image

FCPF11N65

Part No
FCPF11N65
Manufacturer
onsemi
Description
Res Thick Film 1210 13.7 Ohm 1% 1/2W 100ppm/C Molded SMD Embossed Carrier T/R
Datasheet
FCPF11N65
Test Report
Available
Samples
Available

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    Availability:
    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 11 A
    Drain to Source Breakdown Voltage 650 V
    Drain to Source Resistance 380 mΩ
    Drain to Source Voltage (Vdss) 650 V
    Gate to Source Voltage (Vgs) 30 V
    Input Capacitance 1.49 nF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 36 W
    Min Breakdown Voltage 650 V
    Min Operating Temperature -55 °C
    Number of Channels 1
    Number of Elements 1
    Power Dissipation 36 W
    Rds On Max 380 mΩ
    Turn-Off Delay Time 119 ns
    Turn-On Delay Time 34 ns
    Case/Package TO-220-3
    Mount Through Hole
    Number of Terminals 3
    Height 19.4 mm
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