EGP30B Generic image

EGP30B

Part No
EGP30B
Manufacturer
onsemi
Description
Rectifier Diode, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, DO-201AD
Datasheet
EGP30B
Test Report
Available
Samples
Available

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    Available

    Product Specification

    Specification Value
    Average Rectified Current 3 A
    Capacitance 95 pF
    Current Rating 3 A
    Element Configuration Single
    Forward Current 3 A
    Forward Voltage 950 mV
    Max Forward Surge Current (Ifsm) 125 A
    Max Operating Temperature 150 °C
    Max Output Current 3 A
    Max Power Dissipation 6.25 W
    Max Repetitive Reverse Voltage (Vrrm) 100 V
    Max Reverse Voltage (DC) 100 V
    Max Surge Current 125 A
    Min Operating Temperature -65 °C
    Natural Thermal Resistance 20 °C/W
    Number of Elements 1
    Output Current 3 A
    Peak Non-Repetitive Surge Current 125 A
    Peak Reverse Current 5 µA
    Polarity Standard
    Power Dissipation 6.25 W
    Recovery Time 50 ns
    Reverse Recovery Time 50 ns
    Reverse Standoff Voltage 100 V
    Reverse Voltage 100 V
    Schedule B 8541100080, 8541100080|8541100080, 8541100080|8541100080|8541100080, 8541100080|8541100080|8541100080|8541100080
    Voltage Rating (DC) 100 V
    Mount Through Hole
    Number of Pins 2
    Number of Terminals 2
    Weight 360 mg
    Diameter 5.6 mm
    Height 9.5 mm
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