EGP30A Generic image

EGP30A

Part No
EGP30A
Manufacturer
onsemi
Description
Rectifier Diode, 1 Phase, 1 Element, 3A, 50V V(RRM), Silicon, DO-201AD
Datasheet
EGP30A
Test Report
Available
Samples
Available

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    Availability:
    Available

    Product Specification

    Specification Value
    Average Rectified Current 3 A
    Capacitance 95 pF
    Current Rating 3 A
    Element Configuration Single
    Forward Current 3 A
    Forward Voltage 950 mV
    Max Forward Surge Current (Ifsm) 125 A
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Output Current 3 A
    Max Power Dissipation 6.25 W
    Max Repetitive Reverse Voltage (Vrrm) 50 V
    Max Reverse Voltage (DC) 50 V
    Max Surge Current 125 A
    Min Operating Temperature -65 °C
    Natural Thermal Resistance 20 °C/W
    Number of Elements 1
    Output Current 3 A
    Packaging Cut Tape (CT)
    Peak Non-Repetitive Surge Current 125 A
    Peak Reverse Current 5 µA
    Polarity Standard
    Power Dissipation 6.25 W
    Recovery Time 50 ns
    Reverse Recovery Time 50 ns
    Reverse Standoff Voltage 50 V
    Reverse Voltage 50 V
    Voltage Rating (DC) 50 V
    Case/Package Axial
    Mount Through Hole
    Number of Pins 2
    Number of Terminals 2
    Weight 360 mg
    Height 5.6 mm
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